SIMULATION AND DESIGN AlGaN HETEROJUNCTION FIELD-EFFECT TRANSISTOR

Abstract

AlGaN ternary alloys with a band gap of 3.4 to 6.2 eV are promising materials for the construction of various electronic devices: diodes, transistors, lasers, microwave circuits. Replacing silicon with GaN allows several times to increase the operating temperature, the cutoff frequency, and to reduce several times the switching and conduction losses in power devices. A necessary element in the development of new electronic devices is computer modeling of physical processes in them. In this work, a model of a heterojunction field-effect transistor (FET) based on Al_xGa_1-xN was developed using the COMSOL Multiphysics software, including its current-voltage characteristic and other parameters.