SIMULATION AND DESIGN AlGaN HETEROJUNCTION FIELD-EFFECT TRANSISTOR
DOI:
https://doi.org/10.36773/1818-1112-2023-130-1-76-81Keywords:
heterojunction field-effect transistor, gallium nitride, aluminum nitride, diffusion-drift model, polarization, current-voltage characteristicAbstract
AlGaN ternary alloys with a band gap of 3.4 to 6.2 eV are promising materials for the construction of various electronic devices: diodes, transistors, lasers, microwave circuits. Replacing silicon with GaN allows several times to increase the operating temperature, the cutoff frequency, and to reduce several times the switching and conduction losses in power devices. A necessary element in the development of new electronic devices is computer modeling of physical processes in them. In this work, a model of a heterojunction field-effect transistor (FET) based on AlxGa1-xN was developed using the COMSOL Multiphysics software, including its current-voltage characteristic and other parameters.
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